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DDC144TU
NEW PRODUCT
DUAL NPN TRANSISTORS WITH 47K OHM BASE RESISTOR
General Description
* DDC144TU is best suited for logic switching applications using control circuits like micro-controllers, comparators, etc. It features two discrete NPN transistors which can support maximum continuous current of 100 mA. NPN transistors can be used as a control and also these can be biased using higher supply voltages due to the built in current limiting base resistor of 47 K Ohm. The component devices can be used as a part of a circuit or as a stand alone discrete device. Fig. 1: SOT-363
CQ1 BQ2 EQ2
Features
* * * * Built in Base Resistors Epitaxial Planar Die Construction Lead Free By Design/RoHS Compliant (Note 1) "Green" Device (Note 2)
Mechanical Data
* * * * * * * * Case: SOT-363 Case Material: Molded Plastic. "Green Molding" Compound. UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020C Terminal Connections: See Fig. 2 Terminals: Finish - Matte Tin annealed over Alloy 42 leadframe. Solderable per MIL-STD-202, Method 208 Marking & Type Code Information: See Page 5 Ordering Information: See Page 5 Weight: 0.015 grams (approximate)
Q1
R2
47k
DDC144T_DIE
Q2
DDC144T_DIE
R1 47k
EQ1
BQ1
CQ2
Fig. 2: Schematic and Pin Configuration Sub-Component P/N DDTC144T_DIE DDTC144T_DIE Reference Q1 Q2 Device Type NPN NPN R1 (NOM) 47K R2 (NOM) 47K Figure 2 2
Maximum Ratings: Total Device
Characteristic Power Dissipation Power Deration above 25C Output Current
@TA = 25C unless otherwise specified Symbol Pd Pder Iout Value 200 1.6 100 Unit mW mW / C mA
Thermal Characteristics
Characteristic Junction Operation and Storage Temperature Range Thermal Resistance, junction to ambient (packaged device) (Ref: equivalent to only one heated junction) @ TA = 25C
Notes:
Symbol TJ, TSTG RJA
Value -55 to +150 625
Unit C C/W
1. No purposefully added lead. 2. Diodes Inc.'s "Green" policy can be found on our website at http:/www.diodes.com/products/lead_free/index.php. 3. Device mounted on FR-4 PCB, 1" x 0.85" x 0.062"; pad layout as shown on Page 5 or see Diodes Inc. suggested pad layout document AP02001, which can be found on our website at http:/www.diodes.com/datasheets/ap02001.pdf.
DS30767 Rev. 6 - 2
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DDC144TU
(c) Diodes Incorporated
NEW PRODUCT
Maximum Ratings: Sub-Component Device: Discrete NPN Transistor (Q1, Q2)
Characteristic Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current (dc) Symbol VCBO VCEO VEBO IC(max) @TA = 25C unless otherwise specified Value 50 50 6 50 Unit V V V mA
Electrical Characteristics
Characteristic Off Characteristics Collector-Base Cut Off Current Collector-Emitter Cut Off Current, IO(OFF) Emitter-Base Cut Off Current Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Output Voltage (Transistor is off) Input Voltage (load is off) Output Current (leakage same as ICEO) On Characteristics*
@TA = 25C unless otherwise specified Symbol ICBO ICEO IEBO V(BR)CBO V(BR)CEO V(BR)EBO VOH VI(OFF) IO(OFF) Min 50 50 6 4.6 Typ 4.45 0.6 0.03 0.075 0.05 0.2 400 400 350 300 110 0.2 0.95 19.2 47 250 Max 100 500 500 0.4 850 0.1 0.1 0.1 0.3 0.25 28 1.2 1.6 5 Unit nA nA nA V V V V nA V V V V Vdc Vdc mA V V K MHz pF Test Condition VCB = 50V, IE = 0 VCE = 50V, IB = 0 VEB = 5V, IC = 0 IC = 50uA, IE = 0 IC = 1 mA, IB = 0
B
IE = 50uA, IC = 0 VCC = 5V, VB = 0.05V, RL = 1K
B
VCE = 5V, IC = 100uA VCC = 50V, VI = 0V IC = 2.5 mA, IB = 0.25 mA
B
Collector-Emitter Saturation Voltage
VCE(SAT)
150 150
IC = 10mA, IB = 0.5mA
B
IC = 10mA, IB = 1mA
B
IC = 50mA, IB= 5mA
B
VCE = 5V, IC = 1 mA VCE = 5V, IC = 10 mA VCE = 5V, IC = 25 mA VCE = 5V, IC = 50 mA VCE = 5V, IC = 100 mA VCC = 5V, VB = 2.5V, RL=10K
B
DC Current Gain
hFE
150 150 50
Output Voltage (equivalent to VCE(SAT) or VO(on)) Input Voltage Input Current Base-Emitter Turn-on Voltage Base-Emitter Saturation Voltage Input Resistor +/- 30% (Base) Small Signal Characteristics Transition Frequency (gain-bandwidth product) Collector Capacitance, (Ccbo-Output Capacitance)
*Pulse Test: Pulse width, tp<300 uS, Duty Cycle, d<=0.02
VOL VI(ON) Ii VBE(ON) VBE(SAT) R1 fT CC
1.5
VO= 0.3V, IC= 2mA VI = 5V VCE = 5V, IC = 2mA IC = 200uA, IB = 20uA
B
VCE = 10V, IE = 5mA, f =100MHz VCB = 10V, IE = 0, f = 1MHz
NEW PRODUCT
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DDC144TU
(c) Diodes Incorporated
250
35 Pd, POWER DISSIPATION (mW) 30 25 20 15 10 5
NEW PRODUCT
Pd, POWER DISSIPATION (mW)
200
150
100
50
0 0 25 50 75 100 125 150 175 TA, AMBIENT TEMPERATURE (C) Fig. 3 Maximum Power Derating Curve
0 0 25 50 75 100 125 150 175 TA, AMBIENT TEMPERATURE (C) Fig. 4 Power Derating for Nominal Operation
hFE, DC CURRENT GAIN
hFE, DC CURRENT GAIN
TA = 85 C
T 125C TA = A = 125C TA = 25C
TA = 25C TA = 85C TA = 125C
TA = 150C TA = -55C
TA = 150C
TA = -55C
IC, COLLECTOR CURRENT (mA) Fig. 5 DC Current Gain
IB = 4.5mA IB = 4mA IB = 5mA
IC, COLLECTOR CURRENT (mA) Fig. 6 DC Current Gain
IC, COLLECTOR CURRENT (A)
IB = 3.5mA IB = 3mA IB = 2.5mA
COLLECTOR EMITTER SATURATION VOLTAGE (V)
100
10
1
IB = 1.5mA
IB = 1mA
0.1
TA = 150C
TA = 125C
VCE(SAT),
IB = 0.5mA
TA = -55C
0.01
TA = 85C
TA = 25C
0.1
VCE, COLLECTOR-EMITTER VOLTAGE (V) Fig. 7 IC vs. VCE
1
10
100
1000
IC, COLLECTOR CURRENT (mA) Fig. 8 VCE(SAT) vs IC
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DDC144TU
(c) Diodes Incorporated
NEW PRODUCT
TA = -55 C
VBE, BASE-EMITTER VOLTAGE (V)
TA = 85 C
T A = 125C
TA = 25C
TA = 150C
TA = 125C T A = 150C
TA = 85C
0.1
1
10
100
IC, COLLECTOR CURRENT (mA) Fig. 9 VBE vs IC
T A = 150 C
1 IC, COLLECTOR CURRENT (mA) Fig. 10 VBE(SAT) vs IC
T A = 25 C
TA = -55 C
TA = 85 C
IC, COLLECTOR CURRENT (mA) Fig. 11 Input Voltage vs Output Current
DS30767 Rev. 6 - 2
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DDC144TU
(c) Diodes Incorporated
NEW PRODUCT
Ordering Information (Note 4)
Device DDC144TU-7
Notes: 4.
Marking Code N21
Packaging SOT-363
Shipping 3000/Tape & Reel
For Packaging Details, please see below or go to our website at http://www.diodes.com/datasheets/ap02007.pdf.
Marking Information
N21 YM
Fig. 12 Date Code Key Year Code Month Code
N21 = Product Type Marking Code YM = Date Code Marking Y = Year e.g., U = 2007 M = Month e.g., 9 = September
2006 T Jan 1 Feb 2
2007 U Mar 3 Apr 4
Mechanical Details
A
BC
H K M
J
D
F
L
Fig. 13
Suggested Pad Layout: (Based on IPC-SM-782)
E E
Z
G
Y X
Fig. 14
DS30767 Rev. 6 - 2
N21 YM
2008 V May 5 6
2009 W Jun Jul 7
2010 X Aug 8 Sep 9
2011 Y Oct O Nov N
2012 Z Dec D
SOT-363 Dim Min Max A 0.10 0.30 B 1.15 1.35 C 2.00 2.20 D 0.65 Nominal F 0.30 0.40 H 1.80 2.20 J - 0.10 K 0.90 1.00 L 0.25 0.40 M 0.10 0.25 0 8 All Dimensions in mm
C
Figure 14 SOT-363 Dimensions Z 2.5 G 1.3 X 0.42 Y 0.6 C 1.9 E 0.65 All Dimensions in mm
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DDC144TU
(c) Diodes Incorporated
NEW PRODUCT
IMPORTANT NOTICE Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further notice to any product herein. Diodes Incorporated does not assume any liability arising out of the application or use of any product described herein; neither does it convey any license under its patent rights, nor the rights of others. The user of products in such applications shall assume all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on our website, harmless against all damages. LIFE SUPPORT Diodes Incorporated products are not authorized for use as critical components in life support devices or systems without the expressed written approval of the President of Diodes Incorporated.
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DDC144TU
(c) Diodes Incorporated

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